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Abstract

The paper covers some measurement aspects of transport of electrons through metals and semiconductors in magnetic field – magnetotransport – allowing for the determination of electrical parameters characteristic of three-dimensional (3D) topological insulators (TI) (i.e. those that behave like an insulator inside their volume and have a conductive layer on their surface). A characteristic feature of the 3D TI is also a lack of differences between the chemical composition of the conductive surface and the interior of the material tested and the fact that the electron states for its surface conductivity are topologically protected. In particular, the methods of generating strong magnetic fields, obtaining low temperatures, creating electrical contacts with appropriate geometry were presented, and the measurement methods were reviewed. In addition, the results of magnetotransport measurements obtained for two volumetric samples based on the HgCdTe compound grown with the molecular beam epitaxy method are presented.
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Authors and Affiliations

Paweł Śliż
1
ORCID: ORCID
Iwona Sankowska
2
Ewa Bobko
1
ORCID: ORCID
Eugeniusz Szeregij
1
Jakub Grendysa
1
Grzegorz Tomaka
1
Dariusz Żak
1
Dariusz Płoch
1
ORCID: ORCID
Agata Jasik
2
ORCID: ORCID

  1. University of Rzeszow, College of Natural Sciences, Institute of Physics, 1 Pigonia St., Rzeszow 35-959, Poland
  2. Łukasiewicz Research Network – Institute of Microelectronics and Photonics, al. Lotników 32/46, 02-668 Warsaw, Poland
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Abstract

In this paper, the authors report strain-balanced M-structures InAs/GaSb/AlSb/GaSb superlattice growth on GaSb substrates using two kinds of interfaces (IFs): GaAs-like IFs and InSb-like IFs. The in-plane compressive strain of 60-period and 100-period InAs��/GaSb/AlSb��/GaSb with different InAs (��) and AlSb (��) monolayers are investigated. The M-structures InAs/GaSb/AlSb/GaSb represent type II superlattices (T2SL) and at present are under intensive investigation. Many authors show theoretical and experimental results that such structures can be used as a barrier material for a T2SL InAs/GaSb absorber tuned for long-wave infrared detectors (8 μm–14 μm). Beside that, M-structure can also be used as an active material for short-wave infrared detectors to replace InAs/GaSb which, for this region of infrared, are a big challenge from the point of view of balancing compression stress. The study of InAs/GaSb/AlSb/GaSb superlattice with the minimal strain for GaSb substrate can be obtained by a special procedure of molecular beam epitaxy growth through special shutters sequence to form both IFs. The authors were able to achieve smaller minimal mismatches of the lattice constants compared to literature. The high-resolution X-ray diffraction measurements prove that two types of IFs are proper for balancing the strain in such structures. Additionally, the results of Raman spectroscopy, surface analyses of atomic force microscopy, and differential interference contrast microscopy are also presented. The numerical calculations presented in this paper prove that the presence of IFs significantly changes the energy gap in the case of the investigated M-structures. The theoretical results obtained for one of the investigated structures, for a specially designed structure reveal an extra energy level inside the energy gap. Moreover, photoluminescence results obtained for this structure prove the good quality of the synthesized M-structures, as well as are in a good agreement with theoretical calculations.
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Authors and Affiliations

Michał Marchewka
1
ORCID: ORCID
Dawid Jarosz
1 2
ORCID: ORCID
Marta Ruszała
1
ORCID: ORCID
Anna Juś
1
ORCID: ORCID
Piotr Krzemiński
1
ORCID: ORCID
Ewa Bobko
1
ORCID: ORCID
Małgorzata Trzyna-Sowa
1
ORCID: ORCID
Renata Wojnarowska-Nowak
1
ORCID: ORCID
Paweł Śliż
1
ORCID: ORCID
Michał Rygała
3
ORCID: ORCID
Marcin Motyka
3
ORCID: ORCID

  1. Center for Microelectronics and Nanotechnology, Institute of Materials Engineering, University of Rzeszów,al. Rejtana 16, 35-959 Rzeszów, Poland
  2. International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
  3. Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems ofTechnology, Wrocław University of Science and Technology, ul. Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

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