TY - JOUR N2 - The paper discusses the application of the current-source concept in the gate drivers for silicon carbide transistors. There is a common expectation that all SiC devices will be switched very fast in order to reach very low values of switching energies. This may be achieved with the use of suitable gate drivers and one of possibilities is a solution with the current source. The basic idea is to store energy in magnetic field of a small inductor and then release it to generate the current peak of the gate current. The paper describes principles of the current-source driver as well as various aspects of practical implementation. Then, the switching performance of the driven SiC transistors is illustrated by double-pulse test results of the normally-ON and normally-OFF JFETs. Other issues such as problem of the drain-gate capacitance and power consumption are also discussed on the base of experimental results. All presented results show that the currentsource concept is an interesting option to fast and efficient driving of SiC transistors. L1 - http://www.czasopisma.pan.pl/Content/84807/PDF/12_paper.pdf L2 - http://www.czasopisma.pan.pl/Content/84807 PY - 2013 IS - No 2 June EP - 343 DO - 10.2478/aee-2013-0026 KW - silicon carbide transistors KW - gate drivers KW - current-source KW - switching process A1 - RÄ…bkowski, Jacek PB - Polish Academy of Sciences VL - vol. 62 DA - 2013 T1 - A current-source concept for fast and efficient driving of silicon carbide transistors SP - 333 UR - http://www.czasopisma.pan.pl/dlibra/publication/edition/84807 T2 - Archives of Electrical Engineering ER -