TY - JOUR N2 - The main drawback of any Design for Reliability methodology is lack of easy accessible reliability models, prepared individually for each critical component. In this paper, a reliability model for SiC power MOSFET in SOT – 227 B housing, subjected to power cycling, is presented. Discussion covers preparation of Accelerated Lifetime Test required to develop such reliability model, analysis of semiconductor degradation progress, samples post-failure analysis and identification of reliability model parameters. Such model may be further used for failure prognostics or useful lifetime estimation of High Performance Power Supplies. L1 - http://www.czasopisma.pan.pl/Content/119835/PDF/29_02133_Bpast.No.69(3)_24.06.21_Druk.pdf L2 - http://www.czasopisma.pan.pl/Content/119835 PY - 2021 IS - 3 EP - e137386 DO - 10.24425/bpasts.2021.137386 KW - reliability engineering KW - reliability modelling KW - power MOSFET KW - SiC A1 - Bąba, Sebastian VL - 69 DA - 26.05.2021 T1 - Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load SP - e137386 UR - http://www.czasopisma.pan.pl/dlibra/publication/edition/119835 T2 - Bulletin of the Polish Academy of Sciences Technical Sciences ER -