TY - JOUR N2 - Among the various thin film coating techniques, atomic layer deposition (ALD) has features of good controllability of the thickness, excellent step-coverage in 3-dimensional object even in the sub-nm thickness range at the relatively low deposition temperature. In this study, SnO2 thin films were grown by ALD in the variation of substrate temperatures from 150 to 250°C. Even such a low temperature may influence on the growth kinetics of the ALD reaction and thus the physical characteristics of thin films, such as crystallinity, film density and optical band gap, etc. We observed the decrease of the growth rate with increasing substrate temperature, at the same time, the density of the film was decreased with increasing temperature. Steric hindrance effect of the precursor molecule was attributed to the inverse relationship of the growth temperature and growth rate as well as the film density. Optical indirect band gap energy (~3.6 eV) of the ALD-grown amorphous SnO2 films grown at 150°C was similar with that of the literature value, while slightly lower band gap energy (~3.4 eV) was acquired at the films grown at higher temperature. L1 - http://www.czasopisma.pan.pl/Content/106723/PDF/AMM-2018-2-69-Choi.pdf L2 - http://www.czasopisma.pan.pl/Content/106723 PY - 2018 IS - No 2 KW - atomic layer deposition KW - tin oxide KW - growth rate KW - film density KW - optical band gap A1 - Kim, Daeho A1 - Kim, Dong Ha A1 - Riu, Doh-Hyung A1 - Choi, Byung Joon PB - Institute of Metallurgy and Materials Science of Polish Academy of Sciences PB - Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences VL - vol. 63 DA - 2018.06.30 T1 - Temperature Effect on the Growth Rate and Physical Characteristics of SnO2 Thin Films Grown by Atomic Layer Deposition UR - http://www.czasopisma.pan.pl/dlibra/publication/edition/106723 T2 - Archives of Metallurgy and Materials ER -