@ARTICLE{But_Dmytro_B._Compact_2023,
 author={But, Dmytro B. and Chernyadiev, Alexander V. and Ikamas, Kęstutis and Kołaciński, Cezary and Krysl, Anastasiya and Roskos, Hartmut G. and Knap, Wojciech and Lisauskas, Alvydas },
 volume={31},
 number={2},
 journal={Opto-Electronics Review},
 pages={e144599},
 howpublished={online},
 year={2023},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={This paper reports on compact CMOS-based electronic sources and detectors developed for the terahertz frequency range. It was demonstrated that with the achievable noise-equivalent power levels in a few tens of pW\Hz 1/2 and the emitted power in the range of 100 μW, one can build effective quasi-optical emitter-detector pairs operating in the 200–266 GHz range with the input power-related signal-to-noise ratio reaching 70 dB for 1 Hz-equivalent noise bandwidth. The applicability of these compact devices for a variety of applications including imaging, spectroscopy or wireless communication links was also demonstrated.},
 type={Article},
 title={Compact terahertz devices based on silicon in CMOS and BiCMOS technologies},
 URL={http://www.czasopisma.pan.pl/Content/126923/PDF/OPELRE_2023_31_2_D_B_But.pdf},
 doi={10.24425/opelre.2023.144599},
 keywords={terahertz, teraFET, CMOS, THz emitter, THz detectors},
}