@ARTICLE{Ryu_Sung_Yeon_Growth_2021,
 author={Ryu, Sung Yeon and Yun, Hee Ju and Lee, Min Hwan and Choi, Byung Joon},
 volume={vol. 66},
 number={No 3},
 journal={Archives of Metallurgy and Materials},
 pages={755-758},
 howpublished={online},
 year={2021},
 publisher={Institute of Metallurgy and Materials Science of Polish Academy of Sciences},
 publisher={Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences},
 abstract={Gadolinium oxide (Gd2O3) is one of the lanthanide rare-earth oxides, which has been extensively studied due to its versatile functionalities, such as a high permittivity, reactivity with moisture, and ionic conductivity, etc. In this work, GdOx thin film was grown by atomic layer deposition using cyclopentadienyl (Cp)-based Gd precursor and water. As-grown GdOx film was amorphous and had a sub-stoichiometric (x ~ 1.2) composition with a uniform elemental depth profile. ~3 nm-thick GdOx thin film could modify the hydrophilic Si substrate into hydrophobic surface with water wetting angle of 70°. Wetting and electrical test revealed that the growth temperature affects the hydrophobicity and electrical strength of the as-grown GdOx film.},
 type={Article},
 title={Growth Temperature Effect of Atomic-Layer-Deposited GdOx Films},
 URL={http://www.czasopisma.pan.pl/Content/119248/PDF/AMM-2021-3-17-Byung%20Joon%20Choi.pdf},
 doi={10.24425/amm.2021.136375},
 keywords={gadolinium oxide (Gd2O3), rare-earth oxide, atomic layer deposition, hydrophobicity, electrical property},
}