@ARTICLE{Łuszczek_Maciej_The_2020, author={Łuszczek, Maciej and Turzyński, Marek and Świsulski, Dariusz}, volume={vol. 66}, number={No 4}, journal={International Journal of Electronics and Telecommunications}, pages={753-758}, howpublished={online}, year={2020}, publisher={Polish Academy of Sciences Committee of Electronics and Telecommunications}, abstract={The behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-state characteristics taking also into account GFET capacitances. The authors’ model is defined by a relatively small number of equations which are not nested and all the parameters can be easily extracted. It was demonstrated that the proposed model allows to simulate the steady-state characteristics with the accuracy approximately as high as in the case of the physical model. The presented compact GFET model can be used for circuit or system-level simulations in the future.}, type={Article}, title={The Behavioural Model of Graphene Field-effect Transistor}, URL={http://www.czasopisma.pan.pl/Content/117132/PDF/101_2649_Luszczek_skl.pdf}, doi={10.24425/ijet.2020.134037}, keywords={Graphene field-effect transistor, behavioural model, circuit simulations, sensors}, }