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Characterization of morphology and optical properties of SnO₂ nanowires prepared by electrospinning

Tomasz Tański Weronika Smok Wiktor Matysiak
Bulletin of the Polish Academy of Sciences Technical Sciences | 2021 | 69 | 5 | e137507 | DOI: 10.24425/bpasts.2021.137507
Keywords nanowires nanofibers electrospinning tin oxide optical properties
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Abstract

The growing interest in one-dimensional tin oxide-based nanomaterials boosts research on both high-quality nanomaterials as well as production methods. This is due to the fact that they present unique electrical and optical properties that enable their application in various (opto)electronic devices. Thus, the aim of the paper was to produce ceramic SnO₂ nanowires using electrospinning with the calcination method, and to investigate the influence of the calcination temperature on the morphology, structure and optical properties of the obtained material. A scanning electron microscope (SEM) and Fourier-transform infrared spectroscopy (FTIR) were used to examine the morphology and chemical structure of obtained nanomaterials. The optical properties of manufactured one-dimensional nanostructures were investigated using UV-Vis spectroscopy. Moreover, based on the UV-Vis spectra, the energy band gap of the prepared nanowires was determined. The analysis of the morphology of the obtained nanowires showed that both the concentration of the precursor in the spinning solution and the calcination temperature have a significant impact on the diameter of the nanowires and, consequently, on their optical properties.
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Authors and Affiliations

Tomasz Tański
1
ORCID: ORCID
Weronika Smok
1
ORCID: ORCID
Wiktor Matysiak
1
  1. Department of Engineering Material and Biomaterials, Silesian University of Technology, ul. Konarskiego 18A, 44-100 Gliwice, Poland

Thin SnO2 Films Manufactured Via the Sol-Gel and Electrospinning Methods

W. Matysiak T. Tański W. Smok S. Polishchuk
Archives of Metallurgy and Materials | 2020 | vol. 65 | No 2 | 761-765 | DOI: 10.24425/amm.2020.132817
Keywords thin films nanofibers tin oxide electrospinning optical properties
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Abstract

The aim of this work was to produce a thin SnO2 film by a technique combining the sol-gel method and electrospinning from a solution based on polyvinylpyrrolidone and a tin chloride pentahydrate as a precursor. The spinning solution was subjected to an electrospinning process, and then the obtained nanofiber mats were calcined for 10 h at 500°C. Then, the scanning electron microscopy morphology analysis and chemical composition analysis by X-ray microanalysis of the manufactured thin film was performed. It was shown that an amorphous-crystalline layer formed by the SnO2 nanofiber network was obtained. Based on the UV-Vis spectrum, the width of the energy gap of the obtained layer was determined.

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Authors and Affiliations

W. Matysiak
T. Tański
W. Smok
S. Polishchuk

Fabrication of a Novel Silver-Based Electrical Contact Composites and Assessment of Its Mechanical and Electrical Properties

S. Praveen Kumar S.M. Senthil R. Parameshwaran R. Rathanasamy
Archives of Metallurgy and Materials | 2021 | vol. 66 | No 4 | 1087-1094 | DOI: 10.24425/amm.2021.136428
Keywords silver tin oxide electrical contact composites tungsten oxide conductivity
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Abstract

The electrical contactors play a crucial role in closing the circuit in many power distribution components like overhead lines, underground cables, circuit breakers, transformers, and control systems. The failure in these components mainly occurs due to the break-down of contactors due to the continuous opening and closing action of contacts. Silver (Ag)-based oxide contact materials are widely used in practice, among which silver tin oxide (AgSnO2) is most common. An attempt is made in increasing the performance of AgSnO2, by adding Tungsten Oxide (WO3) in various weight proportions, thus finding the optimal proportion of AgSnO2WO3 to have increased mechanical and electrical performances. All the composite samples are fabricated in-house using powder metallurgy process. The assessment of physical and electrical properties namely, density, hardness, porosity, and electrical conductivity, showed that 90%Ag-8.5%SnO2-1.5%WO3 composite yielded superior results. With help of morphological tests, wear characteristics are also investigated, which showed that 90%Ag-8.5%SnO2-1.5%WO3 composite has a wear coefficient of 0.000227 and a coefficient of friction of 0.174 at an optimized load of 10 N and sliding velocity of 0.5 mm/s.
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Authors and Affiliations

S. Praveen Kumar
1
ORCID: ORCID
S.M. Senthil
1
ORCID: ORCID
R. Parameshwaran
1
ORCID: ORCID
R. Rathanasamy
1
ORCID: ORCID
  1. Kongu Engineering College, Erode, Tamilnadu, India

Fluorine-Doped SnO 2 Thin Films in Solar Cell Applications. Morphological, Optical and Electrical Properties

P. Lisnic L. Hrostea L. Leontie M. Girtan
Archives of Metallurgy and Materials | 2023 | vol. 68 | No 2 | 483-490 | DOI: 10.24425/amm.2023.142426
Keywords fluorine tin oxide (FTO) thin films spray pyrolysis solar cells
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Abstract

This study examines the optimal parameters for obtaining fluorine-doped SnO 2 (FTO) films with promising potential for photovoltaic applications. Due to its properties, tin oxide is used in a wide range of technologies, among which the manufacture of solar cells is one of the most important. Being doped with fluorine, tin dioxide becomes a good transparent and conductive electrode, suitable for solar cell applications. The chemical stability and low cost of the doped SnO 2 makes it an advantageous alternative to tin-doped indium oxide (ITO). Among the most important characteristics of FTO thin films are high photoconductivity under sunlight irradiation and strong UV absorption. The SnO 2 compound, doped with fluorine, exhibits a considerable chemical and physical stability, good electrical conductivity and high transmission (over 85%) in the visible range. The spray pyrolysis technique is the most preferable and efficient deposition method of fluorine-doped SnO2 thin films. This work aims to identify the optimal parameters for the spray pyrolysis of SnO 2:F films and to analyze the morphology, transparency and strength of as obtained films in relation to the doping amount in the precursor solution, spraying distance and film thickness.
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Authors and Affiliations

P. Lisnic
1
ORCID: ORCID
L. Hrostea
2
ORCID: ORCID
L. Leontie
1
ORCID: ORCID
M. Girtan
3
ORCID: ORCID
  1. Alexandru Ioan Cuza University of Iasi, Faculty of Physics Bulevardul Carol I, nr.11, 700506, Iasi, Romania
  2. Alexandru Ioan Cuza University of Iasi, Institute of Interdisciplinary Research, Research Center on Advanced Materials and Technologies, Science Department, Bulevardul Carol I, nr. 11, 700506 Iasi, Romania
  3. Angers University, Faculty of Sciences, Photonics Laboratory, (LPhiA) E.A. 4464, SFR Matrix, 2 Bd Lavoisier, 49000 Angers, France

Electrical Characteristics of Tin Oxide Films Grown by Thermal Atomic Layer Deposition

Seong Yu Yoon Byung Joon Choi
Archives of Metallurgy and Materials | 2020 | vol. 65 | No 3 | 1041-1044 | DOI: 10.24425/amm.2020.133214
Keywords Atomic layer deposition tin oxide electrical property oxygen adsorption
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Abstract

Tin dioxide (SnO2) is an n-type semiconductor and has useful characteristics of high transmittance, excellent electrical properties, and chemical stability. Accordingly, it is widely used in a variety of fields, such as a gas sensor, photocatalyst, optoelectronics, and solar cell. In this study, SnO2 films are deposited by thermal atomic layer deposition (ALD) at 180°C using Tetrakis(dimethylamino)tin and water. A couple of 5.9, 7.4 and 10.1nm-thick SnO2 films are grown on SiO2/Si substrate and then each film is annealed at 400°C in oxygen atmosphere. Current transport of SnO2 films are analyzed by measuring current – voltage characteristics from room temperature to 150°C. It is concluded that electrical property of SnO2 film is concurrently affected by its semiconducting nature and oxidative adsorption on the surface.

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Authors and Affiliations

Seong Yu Yoon
Byung Joon Choi
ORCID: ORCID

Temperature Effect on the Growth Rate and Physical Characteristics of SnO2 Thin Films Grown by Atomic Layer Deposition

Daeho Kim Dong Ha Kim Doh-Hyung Riu Byung Joon Choi
Archives of Metallurgy and Materials | 2018 | vol. 63 | No 2
Keywords atomic layer deposition tin oxide growth rate film density optical band gap
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Abstract

Among the various thin film coating techniques, atomic layer deposition (ALD) has features of good controllability of the thickness, excellent step-coverage in 3-dimensional object even in the sub-nm thickness range at the relatively low deposition temperature. In this study, SnO2 thin films were grown by ALD in the variation of substrate temperatures from 150 to 250°C. Even such a low temperature may influence on the growth kinetics of the ALD reaction and thus the physical characteristics of thin films, such as crystallinity, film density and optical band gap, etc. We observed the decrease of the growth rate with increasing substrate temperature, at the same time, the density of the film was decreased with increasing temperature. Steric hindrance effect of the precursor molecule was attributed to the inverse relationship of the growth temperature and growth rate as well as the film density. Optical indirect band gap energy (~3.6 eV) of the ALD-grown amorphous SnO2 films grown at 150°C was similar with that of the literature value, while slightly lower band gap energy (~3.4 eV) was acquired at the films grown at higher temperature.
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Authors and Affiliations

Daeho Kim
Dong Ha Kim
Doh-Hyung Riu
Byung Joon Choi

Alternative transparent conducting electrode materials for flexible optoelectronic devices

S. Sharma S. Shriwastava S. Kumar K. Bhatt C. Charu Tripathi
Opto-Electronics Review | 2018 | vol. 26 | No 3 | 223-235
Keywords Transparent conductive electrode Optoelectronic devices Indium tin oxide Metal nanotubes Conducting polymers Graphene
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Abstract

Transparent Conductive Electrode (TCE) is an essential part of the optoelectronic and display devices such as Liquid Crystal Displays (LCDs), Solar Cells, Light Emitting Diodes (LEDs), Organic Light Emitting Diodes (OLEDs) and touch screens. Indium Tin Oxide (ITO) is a commonly used TCE in these devices because of its high transparency and low sheet resistance. However, scarcity of indium and brittle nature of ITO limit its use in future flexible electronics. In order to develop flexible optoelectronic devices with improved performance, there is a requirement of replacing the ITO with a better alternate TCE. In this work, several alternative TCEs including transparent conductive oxides, carbon nanotubes, conducting polymers, metal nanowires, graphene and composites of these materials are studied with their properties such as sheet resistance, transparency and flexibility. The advantage and current challenges of these materials are also presented in this work.

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Authors and Affiliations

S. Sharma
S. Shriwastava
S. Kumar
K. Bhatt
C. Charu Tripathi

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