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Abstract

The main drawback of any Design for Reliability methodology is lack of easy accessible reliability models, prepared individually for each critical component. In this paper, a reliability model for SiC power MOSFET in SOT – 227 B housing, subjected to power cycling, is presented. Discussion covers preparation of Accelerated Lifetime Test required to develop such reliability model, analysis of semiconductor degradation progress, samples post-failure analysis and identification of reliability model parameters. Such model may be further used for failure prognostics or useful lifetime estimation of High Performance Power Supplies.
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Authors and Affiliations

Sebastian Bąba
1
ORCID: ORCID

  1. TRUMPF Huettinger Sp. z o.o., Research and Development Department, 05-220 Zielonka, Poland

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