In this work we propose and analyze the possibility of creating terahertz plasmon-emitting graphene-channel transistor. It is shown that at electric pumping the damping of the terahertz plasmons can give way to their amplification, when the real part of the dynamic conductivity of graphene becomes negative in the terahertz range of frequencies due to the interband population inversion.

We experimentally studied three different D-shape polymer optical fibres with an exposed core for their applications as surface plasmon resonance sensors. The first one was a conventional D-shape fibre with no microstructure while in two others the fibre core was surrounded by two rings of air holes. In one of the microstructured fibres we introduced special absorbing inclusions placed outside the microstructure to attenuate leaky modes. We compared the performance of the surface plasmon resonance sensors based on the three fibres. We showed that the fibre bending enhances the resonance in all investigated fibres. The measured sensitivity of about 610 nm/RIU for the refractive index of glycerol solution around 1.350 is similar in all fabricated sensors. However, the spectral width of the resonance curve is significantly lower for the fibre with inclusions suppressing the leaky modes.

We experimentally studied three different D-shape polymer optical fibres with an exposed core for their applications as surface plasmon resonance sensors. The first one was a conventional D-shape fibre with no microstructure while in two others the fibre core was surrounded by two rings of air holes. In one of the microstructured fibres we introduced special absorbing inclusions placed outside the microstructure to attenuate leaky modes. We compared the performance of the surface plasmon resonance sensors based on the three fibres. We showed that the fibre bending enhances the resonance in all investigated fibres. The measured sensitivity of about 610 nm/RIUfor the refractive index of glycerol solution around 1.350 is similar in all fabricated sensors. However, the spectral width of the resonance curve is significantly lower for the fibre with inclusions suppressing the leaky modes.

This work presents a theoretical study for the distribution of nanocomposite structure of plasmonic thin-film solar cells through the absorber layers. It can be reduced the material consumption and the cost of solar cell. Adding nanometallic fillers in the absorber layer has been improved optical, electrical characteristics and efficiency of traditional thin film solar cells (ITO /CdS/PbS/Al and SnO2/CdS/CdTe/Cu) models that using sub micro absorber layer. Also, this paper explains analysis of J-V, P-V and external quantum efficiency characteristics for nanocomposites thin film solar cell performance. Also, this paper presents the effect of increasing the concentration of nanofillers on the absorption, energy band gap and electron-hole generation rate of absorber layers and the effect of volume fraction on the energy conversion efficiency, fill factor, space charge region of the nanocomposites solar cells.

The paper presents a dual-band plasmonic solar cell. The proposed unit structure gathers two layers, each layer consists of a silver nanoparticle deposited on a GaAs substrate and covered with an ITO layer, It reveals two discrete absorption bands in the infra-red part of the solar spectrum. Nanoparticle structures have been used for light-trapping to increase the absorption of plasmonic solar cells. By proper engineering of these structures, resonance frequencies and absorption coefficients can be controlled as it will be elucidated. The simulation results are achieved using CST Microwave Studio through the finite element method. The results indicate that this proposed dual-band plasmonic solar cell exhibits an absorption bandwidth, defined as the full width at half maximum, reaches 71 nm. Moreover, It can be noticed that by controlling the nanoparticle height above the GaAs substrate, the absorption peak can be increased to reach 0.77.

The paper presents results of a simulation of the plasmon effect achieved between a thin precious metal layer and a biconical optical fibre taper, manufactured on a standard single mode fibre. Gold, silver and titanium were used as a metal which fulfilled a cladding function for a small diameter structure. For simulation Mode Solution software was used on which modal and frequency analyses of a wavelength were provided in the range of 800–1700 nm. A displacement of a plasmon pick in dependence of thickness of a deposited precious layer for the highest plasmon effects was observed.

The work presents doping characteristics and properties of high Si−doped InGaAs epilayers lattice−matched to InP grown by low pressure metal−organic vapour phase epitaxy. Silane and disilane were used as dopant sources. The main task of investigations was to obtain heavily doped InGaAs epilayers suitable for usage as plasmon−confinement layers in the construction of mid−infrared InAlAs/InGaAs/InP quantum−cascade lasers (QCLs). It requires the doping concentration of 1×10¹⁹ cm^–3 and 1×10²⁰ cm^–3 for lasers working at 9 μm and 5 μm, respectively. The electron concentration increases linearly with the ratio of gas−phase molar fraction of the dopant to III group sources (IV/III). The highest electron concentrations suitable for InGaAs plasmon−contact layers of QCL was achieved only for disilane. We also observed a slight influence of the ratio of gas−phase molar fraction of V to III group sources (V/III) on the doping efficiency. Structural measurements using high−resolution X−ray diffraction revealed a distinct influence of the doping concentration on InGaAs composition what caused a lattice mismatch in the range of –240 ÷ –780 ppm for the samples doped by silane and disilane. It has to be taken into account during the growth of InGaAs contact layers to avoid internal stresses in QCL epitaxial structures.