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Abstract

An in-situ nanoindenter with a flat tip was employed to conduct buckling tests of a single nanowire with simultaneous SEM imaging. A series of SEM images allowed us to calculate deflection. The deflection was confronted with the mathematical model of elastica. The post-buckling behaviour of nanowires is conducted in the framework of the nonlinear elasticity theory. Results show the significant effect of geometrical parameters on the stability of buckled nanowires.
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Authors and Affiliations

Aleksandra Manecka-Padaż
1
ORCID: ORCID
Piotr Jenczyk
1
ORCID: ORCID
Ryszard B. Pęcherski
1
ORCID: ORCID
Anna Nykiel
2
ORCID: ORCID

  1. Institute of Fundamental Technological Research Polish Academy of Sciences, Poland
  2. Institute of Nuclear Physics Polish Academy of Sciences, Poland
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Abstract

Effects from adsorption of organic species on the surface of nanomaterials have been investigated. Exposure to organic contaminants during material processing, handling and environmental exposure is unavoidable during the manufacturing process of nanoscale materials. In addition, at the nanoscale, surface area to volume ratios increase and surface effects will have an increasing influence on the material properties. Experimentally measured electrical properties of gold nanowires and composition will be presented. The results indicated that C, C—O—C and C=O are adsorbed at the surface of the gold nanowires. These surface contaminants are believed to cause the increase in measured resistivity. A theoretical study was performed to investigate diffusion of these contaminants into the first surface layer, which may act as scattering mechanisms for current flow.

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Authors and Affiliations

C.M. Lilley
R. Meyer
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Abstract

Magnetic properties of Fe nanowire arrays (NWs) electrodeposited in anodic alumina membranes have been studied. The influence of nanowire geometry (length, pore diameter) and an external magnetic field applied during electrodeposition process on the magnetic properties of nanowire arrays was investigated. With the use of the X-ray diffraction analysis the structure of iron wires was determined. The iron wires have the regular Body Centered Cubic structure. Magnetic measurements show that shape anisotropy aligns the preferential magnetization axis along the wire axis. It was found that the application of an external magnetic field in a parallel direction to the sample surface induces magnetic anisotropy with an easy axis of magnetization following the nanowire axis. The dependence of the height of Fe wires on the electrodeposition time was determined.

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Authors and Affiliations

I. Dobosz
W. Gumowska
M. Czapkiewicz
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Abstract

The growing interest in one-dimensional tin oxide-based nanomaterials boosts research on both high-quality nanomaterials as well as production methods. This is due to the fact that they present unique electrical and optical properties that enable their application in various (opto)electronic devices. Thus, the aim of the paper was to produce ceramic SnO₂ nanowires using electrospinning with the calcination method, and to investigate the influence of the calcination temperature on the morphology, structure and optical properties of the obtained material. A scanning electron microscope (SEM) and Fourier-transform infrared spectroscopy (FTIR) were used to examine the morphology and chemical structure of obtained nanomaterials. The optical properties of manufactured one-dimensional nanostructures were investigated using UV-Vis spectroscopy. Moreover, based on the UV-Vis spectra, the energy band gap of the prepared nanowires was determined. The analysis of the morphology of the obtained nanowires showed that both the concentration of the precursor in the spinning solution and the calcination temperature have a significant impact on the diameter of the nanowires and, consequently, on their optical properties.
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Authors and Affiliations

Tomasz Tański
1
ORCID: ORCID
Weronika Smok
1
ORCID: ORCID
Wiktor Matysiak
1

  1. Department of Engineering Material and Biomaterials, Silesian University of Technology, ul. Konarskiego 18A, 44-100 Gliwice, Poland
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Abstract

The publication presents experimental verification of a mathematical model of silver nanowire (AgNWs) fabrication in a continuous flow process in a helical tubular reactor. Silver nanowires were synthesised with a polyol process, with ethylene glycol as the reductant of the nanomaterial precursor and solvent of the reactants. The observed average diameters and lengths of AgNWs were 98-226 nm and 5-45 μm, respectively. The experimental conversions of the precursor were 0.71-0.90. A comparison of calculated and measured conversions for the investigated range of residence times and temperatures showed that the observed error was less than 20%.
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Authors and Affiliations

Grzegorz Dzido
1
ORCID: ORCID
Muhammad Omer Farooq
2
ORCID: ORCID
Aleksandra Smolska
2
ORCID: ORCID

  1. Silesian University of Technology, Department of Chemical Engineering and Process Design,Strzody 7, 44-100 Gliwice, Poland
  2. Silesian University of Technology, Doctoral School, Akademicka 2A, 44-100 Gliwice, Poland
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Abstract

This paper presents research on the deposition of an indium tin oxide (ITO) layer which may act as a recombination layer in a silicon/perovskite tandem solar cell. ITO was deposited by magnetron sputtering on a highly porous surface of silicon etched by the metal-assisted etching method (MAE) for texturing as nano and microwires. The homogeneity of the ITO layer and the degree of coverage of the silicon wires were assessed using electron microscopy imaging techniques. The quality of the deposited layer was specified, and problems related to both the presence of a porous substrate and the deposition method were determined. The presence of a characteristic structure of the deposited ITO layer resembling a "match" in shape was demonstrated. Due to the specificity of the porous layer of silicon wires, the ITO layer should not exceed 80 nm. Additionally, to avoid differences in ITO thickness at the top and base of the silicon wire, the layer should be no thicker than 40 nm for the given deposition parameters.
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Authors and Affiliations

Grażyna Kulesza-Matlak
1
ORCID: ORCID
Marek Szindler
2
ORCID: ORCID
Magdalena M. Szindler
2
ORCID: ORCID
Anna Sypień
1
ORCID: ORCID
Łukasz Major
1
ORCID: ORCID
Kazimierz Drabczyk
1
ORCID: ORCID

  1. Institute of Metallurgy and Materials Science, Polish Academy of Sciences, ul. W. Reymonta 25, 30-059 Kraków, Poland
  2. Faculty of Mechanical Engineering, Silesian University of Technology, ul. Akademicka 2A, 44-100 Gliwice, Poland
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Abstract

In this study a two-step short wet etching was implemented for the black silicon formation. The proposed structure consists of two steps. The first step: wet acidic etched pits-like morphology with a quite new solution of lowering the texturization temperature and second step: wires structure obtained by a metal assisted etching (MAE). The temperature of the process was chosen due to surface development control and surface defects limitation during texturing process. This allowed to maintain better minority carrier lifetime compared to etching in ambient temperature. On the top of the acidic texture the wires were formed with optimized height of 350 nm. The effective reflectance of presented black silicon structure in the wavelength range of 300-1100 nm was equal to 3.65%.
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Authors and Affiliations

G. Kulesza-Matlak
K. Gawlińska
Z. Starowicz
A. Sypień
K. Drabczyk
B. Drabczyk
M. Lipiński
P. Zięba
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Abstract

In our studies the absorption, transmittance and reflectance spectra for periodic nanostructures with different parameters were calculated by the FDTD (Finite-Difference Time-Domain) method. It is shown that the proportion of reflected light in periodic structures is smaller than in case of thin films. The experimental results showed the light reflectance in the spectral range of 400–900 nm lower than 1% and it was significantly lower in comparison with surface texturing by pyramids or porous silicon.

Silicon nanowires on p-type Si substrate were formed by the Metal-Assisted Chemical Etching method (MacEtch). At solar cells with radial p-n junction formation the thermal diffusion of phosphorus has been used at 790°C. Such low temperature ensures the formation of an ultra-shallow p-n junction. Investigation of the photoelectrical properties of solar cells was carried out under light illumination with an intensity of 100 mW/cm2. The obtained parameters of NWs' solar cell were Isc = 22 mA/cm2, Uoc = 0.62 V, FF = 0.51 for an overall efficiency η = 7%. The relatively low efficiency of obtained SiNWs solar cells is attributed to the excessive surface recombination at high surface areas of SiNWs and high series resistance.

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Authors and Affiliations

O.V. Pylypova
A.A. Evtukh
P.V. Parfenyuk
I.I. Ivanov
I.M. Korobchuk
O.O. Havryliuk
O.Yu. Semchuk
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Abstract

In this paper, a low power highly sensitive Triple Metal Surrounding Gate (TM-SG) Nanowire MOSFET photosensor is proposed which uses triple metal gates for controlling short channel effects and III–V compound as the channel material for effective photonic absorption. Most of the conventional FET based photosensors that are available use threshold voltage as the parameter for sensitivity comparison but in this proposed sensor on being exposed to light there is a substantial increase in conductance of the GaAs channel underneath and, thereby change in the subthreshold current under exposure is used as a sensitivity parameter (i.e., Iillumination/IDark). In order to further enhance the device performance it is coated with a shell of AlxGa1-xAs which effectively passivates the GaAs surface and provides a better carrier confinement at the interface results in an increased photoabsorption. At last performance parameters of TM-SG Bare GaAs Nanowire MOSFET are compared with TM-SG core-shell GaAs/AlGaAs Nanowire MOSFET and the results show that Core-Shell structures can be a better choice for photodetection in visible region.

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Authors and Affiliations

S.K. Sharma
A. Jain
B. Raj
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Abstract

We present Al2O3-ZnAl2O4-ZnO nanostructure, which could be a prominent candidate for optoelectronics, mechanical and sensing applications. While ZnO and ZnAl2O4 composites are mostly synthesized by sol-gel technique, we propose a solid-vapor growth mechanism. To produce Al2O3-ZnAl2O4-ZnO nanostructure, we conduct ZnO:C powder heating resulting in ZnO nanowires (NWs) growth on sapphire substrate and ZnAl2O4 spinel layer at the interface. The nanostructure was examined with Scanning Electron Microscopy (SEM) method. Focused Ion Beam (FIB) technique enabled us to prepare a lamella for Transmission Electron Microscopy (TEM) imaging. TEM examination revealed high crystallographic quality of both spinel and NW structure. Epitaxial relationships of Al2O3-ZnAl2O4 and ZnAl2O4-ZnO are given.
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Authors and Affiliations

W. Zajkowska-Pietrzak
1
ORCID: ORCID
J. Turczyński
1
ORCID: ORCID
B. Kurowska
1
ORCID: ORCID
H. Teisseyre
1
ORCID: ORCID
K. Fronc
1
ORCID: ORCID
J. Dąbrowski
1
ORCID: ORCID
S. Kret
1
ORCID: ORCID

  1. Institute of Physics Polish Academy of Sciences, 32/46 Lotników Av., 02-668 Warszawa, Poland

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