Photoluminescence of HgCdTe epitaxial films and nanostructures and electroluminescence of InAs(Sb,P) light-emitting diode (LED) nanoheterostructures were studied. For HgCdTe-based structures, the presence of compositional fluctuations, which localized charge carriers, was established. A model, which described the effect of the fluctuations on the rate of the radiative recombination, the shape of luminescence spectra and the position of their peaks, was shown to describe experimental photoluminescence data quite reasonably. For InAs(Sb,P) LED nanoheterostructures, at low temperatures (4.2–100 K) stimulated emission was observed. This effect disappeared with the temperature increasing due to the resonant ‘switch-on’ of the Auger process involving transition of a hole to the spin-orbit-splitted band. Influence of other Auger processes on the emissive properties of the nanoheterostructures was also observed. Prospects of employing II–VI and III–V nanostructures in light-emitting devices operating in the mid-infrared part of the spectrum are discussed.

A mode-locked Tm3+-doped fibre laser and amplifier operating at a central wavelength of 1994.3 nm is demonstrated. A thulium oscillator is passively mode-locked by a semiconductor saturable absorber mirror to generate an average power of 17 mW at a fundamental repetition rate of 81 MHz in a short linear cavity. This 2-µm laser train is amplified to an average power to 20.26 W by two double-clad thulium-doped allfibre amplifiers. The pulse energy, duration and peak power is 250 nJ, 23 ps and 9.57 kW, respectively. This represents one of the highest values of average power at ∼ 2-µm-wavelength for picosecond thulium-doped fibre lasers and amplifiers. The performance of the laser system is described in details.

In this study, an analysis of the optical performance of two types of distributed Bragg reflector structures based on GaAs and InP material systems was carried out. The structures were designed for maximum performance at 4 µm with their reflectivity achieving between 80 and 90% with eight pairs of constituent layers. To further enhance the performance of these structures, additional Au layers were added at the bottom of the structure with Ti pre-coating applied to improve the adhesivity of the Au to the semiconductor substrate. The optimal range of Ti layer thickness resulting in the improvement of the maximum reflectivity was determined to be in between 5 and 15 nm.

An efficient operation of a Ho:YLF laser pumped by a Tm-doped fibre laser is reported. The research in a continuous-wave (CW) operation was done for two crystals of the same 0.5 at.%Ho dopant concentration and with different lengths (3×3×30 mm³ and 3×3×50 mm³). For an output coupling transmission of 20% and a crystal length of 50 mm, the maximum CWoutput power of 38.9 W for 81.4 W of incident pump power, corresponding to the slope efficiency of 52.3% and optical-to-optical conversion efficiency of 47.8% (determined with respect to the incident pump power) was achieved. The highest opti- cal-to-optical conversion efficiency of 70.2% with respect to the absorbed pump power was obtained. The influence of a heat-sink cooling water temperature on theCWlaser performance was studied. For a Q-switched operation the pulse repe- tition frequency (PRF) was changed from 2 to 10 kHz. The maximum average output power of 34.1 W at the PRF of 10 kHz was obtained for a 50 mm holmium crystal length. For 2 kHz PRF and 71.9 W of incident pump power, pulse energies of 13.7 mJ with a 21 ns FWHM pulse width corresponding to 652 kW peak power were recorded.