This article presents the research results on impact of the method of polycrystalline graphene layers separation from the growth substrate on the obtained carbon material quality. The studies were carried out on graphene sheets obtained by metallurgical method on a liquid metal substrate (HSMG® graphene). The graphene was separated using chemical etching method or the electrochemical delamination method, by separating by means of electrolysis. During electrolysis, hydrogen is emitted on a graphene-covered of cathode (metal growth substrate) as a result of the voltage applied. The graphene layer breaks away from metallic substrate by gas accumulation between them. The results from these separation processes were evaluated by means of different tools, such as SEM, TEM and AFM microscopy as well as Raman Spectroscopy. In summary, the majority of analyses indicate that the graphene obtained as a result of hydrogen delamination possesses higher purity, smaller size and number of defects, its surface is smooth and less developed after the transfer process to the target substrate.

In our studies the absorption, transmittance and reflectance spectra for periodic nanostructures with different parameters were calculated by the FDTD (Finite-Difference Time-Domain) method. It is shown that the proportion of reflected light in periodic structures is smaller than in case of thin films. The experimental results showed the light reflectance in the spectral range of 400–900 nm lower than 1% and it was significantly lower in comparison with surface texturing by pyramids or porous silicon.

Silicon nanowires on p-type Si substrate were formed by the Metal-Assisted Chemical Etching method (MacEtch). At solar cells with radial p-n junction formation the thermal diffusion of phosphorus has been used at 790°C. Such low temperature ensures the formation of an ultra-shallow p-n junction. Investigation of the photoelectrical properties of solar cells was carried out under light illumination with an intensity of 100 mW/cm². The obtained parameters of NWs' solar cell were I_sc = 22 mA/cm², U_oc = 0.62 V, FF = 0.51 for an overall efficiency η = 7%. The relatively low efficiency of obtained SiNWs solar cells is attributed to the excessive surface recombination at high surface areas of SiNWs and high series resistance.