Electron beam melting(EBM) is a useful technique to obtain high-purity metal ingots. It is also used for melting refractory metals such as tantalum, which require melting techniques employing a high-energy heat source. Drawing is a method which is used to convert the ingot into a wire shape. The required thickness of the wire is achieved by drawing the ingot from a drawing die with a hole of similar size. This process is used to achieve high purity tantalum springs, which are an essential component of lithography lamp in semiconductor manufacturing process. Moreover, high-purity tantalum is used in other applications such as sputtering targets for semiconductors. Studies related to recycling of tantalum from these components have not been carried out until now. The recycling of tantalum is vital for environmental and economic reasons. In order to obtain high-purity tantalum ingot, in this study impurities contained in the scrap were removed by electron beam melting after pre-treatment using aqua regia. The purity of the ingot was then analyzed to be more than 4N5 (99.995%). Subsequently, drawing was performed using the rod melted by electron beam melting. Owing to continuous drawing, the diameter of the tantalum wire decreased to 0.5 mm from 9 mm. The hardness and oxygen concentration of the tantalum ingot were 149 Hv and less than 300 ppm, respectively, whereas the hardness of the tantalum wire was 232.12 Hv. In conclusion, 4N5 grade tantalum wire was successfully fabricated from tantalum scrap by EBM and drawing techniques. Furthermore, procedure to successfully recycle Tantalum from scraps was established.

High temperature and high electric field applications in tantalum and niobium capacitors are limited by the mechanism of ion migration and field crystallization in a tantalum or niobium pentoxide insulating layer. The study of leakage current (DCL) variation in time as a result of increasing temperature and electric field might provide information about the physical mechanism of degradation. The experiments were performed on tantalum and niobium oxide capacitors at temperatures of about 125°C and applied voltages ranging up to rated voltages of 35 V and 16 V for tantalum and niobium oxide capacitors, respectively. Homogeneous distribution of oxygen vacancies acting as positive ions within the pentoxide layer was assumed before the experiments. DCL vs. time characteristics at a fixed temperature have several phases. At the beginning of ageing the DCL increases exponentially with time. In this period ions in the insulating layer are being moved in the electric field by drift only. Due to that the concentration of ions near the cathode increases producing a positively charged region near the cathode. The electric field near the cathode increases and the potential barrier between the cathode and insulating layer decreases which results in increasing DCL. However, redistribution of positive ions in the insulator layer leads to creation of a ion concentration gradient which results in a gradual increase of the ion diffusion current in the direction opposite to the ion drift current component. The equilibrium between the two for a given temperature and electric field results in saturation of the leakage current value. DCL vs. time characteristics are described by the exponential stretched law. We found that during the initial part of ageing an exponent n = 1 applies. That corresponds to the ion drift motion only. After long-time application of the electric field at a high temperature the DCL vs. time characteristics are described by the exponential stretched law with an exponent n = 0.5. Here, the equilibrium between the ion drift and diffusion is achieved. The process of leakage current degradation is therefore partially reversible. When the external electric field is lowered, or the samples are shortened, the leakage current for a given voltage decreases with time and the DCL vs. time characteristics are described by the exponential stretched law with an exponent n = 0.5, thus the ion redistribution by diffusion becomes dominant.

In this study, different amounts of tantalum carbide (TaC) powders (5, 10 and 15 wt.%) are added to Vanadis 4 Extra steel powders. The composite powders are sintered at 1260, 1280, 1300, 1320, 1340 and 1360°C for 1 h, respectively. The experimental results showed that good mechanical properties (hardness 79.7 HRA, TRS 2246 MPa) were obtained by the addition of 10% TaC sintered at 1320°C for 1 h. Furthermore, the optimal sintered V4ES/TaC (Vanadis 4 Extra steel / TaC) composites after sub-zero treatment possess the highest hardness (80.9 HRA) and transverse rupture strength (TRS) values (2445 MPa), as well as a better polarization resistance (658.99 Ω·cm2). After sub-zero treatment, the VC carbides decompose and re-precipitate refined VC carbides within the grains (VC carbides are formed in steel powder); moreover, the TaC particles are still uniformly distributed around the grain boundaries, which results in dispersion strengthening and precipitation hardening. The results clearly reveal that sub-zero heat treatment effectively improves the microstructure and strengthens the V4ES/TaC composite.