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Abstract

This paper describes the arithmetic blocks based on Montgomery Multiplier (MM), which reduces complexity, gives lower power dissipation and higher operating frequency. The main objective in designing these arithmetic blocks is to use modified full adder structure and carry save adder structure that can be implemented in algorithm based MM circuit. The conventional full adder design acts as a benchmark for comparison, the second is the modified Boolean equation for full adder and third design is the design of full adder consisting of two XOR gate and a 2-to-1 Multiplexer. Besides Universal gates such as NOR gate and NAND gate, full adder circuits are used to further improve the speed of the circuit. The MM circuit is evaluated based on different parameters such as operating frequency, power dissipation and area of occupancy in FPGA board. The schematic designs of the arithmetic components along with the MM architecture are constructed using Quartus II tool, while the simulation is done using Model sim for verification of circuit functionality which has shown improvement on the full adder design with two XOR gate and one 2-to-1 Multiplexer implementation in terms of power dissipation, operating frequency and area.

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Authors and Affiliations

P. Velrajkumar
C. Senthilpari
J. Sheela Francisca
T. Nirmal Raj
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Abstract

This work aims to improve the total power dissipation, leakage currents and stability without disturbing the logic state of SRAM cell with concept called sub-threshold operation. Though, sub-threshold SRAM proves to be advantageous but fails with basic 6T SRAM cell during readability and writability. In this paper we have investigated a non-volatile 6T2M (6 Transistors & 2 Memristors) sub-threshold SRAM cell working at lower supply voltage of VDD=0.3V, where Memristor is used to store the information even at power failures and restores previous data with successful read and write operation overcomes the challenge faced. This paper also proposes a new configuration of non-volatile 6T2M (6 Transistors & 2 Memristors) subthreshold SRAM cell resulting in improved behaviour in terms of power, stability and leakage current where read and write power has improved by 40% and 90% respectively when compared to 6T2M (conventional) SRAM cell. The proposed 6T2M SRAM cell offers good stability of RSNM=65mV and WSNM=93mV which is much improved at low voltage when compared to conventional basic 6T SRAM cell, and improved leakage current of 4.92nA is achieved as compared.
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Authors and Affiliations

Zeba Mustaqueem
1
Abdul Quaiyum Ansari
1
Md Waseem Akram
1

  1. Jamia Milia Islamia Central University, India

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