We report on the status of long-wave infrared Auger suppressed HgCdTe multilayer structures grown on GaAs substrates designed for high operating temperature condition: 200-300 K exhibiting, detectivity -10¹¹ cmHz^1/2/W, time response within a –120 ps range at 230 K. Abnormal responsivity within the range of -30 A/W for electrical area 30×30 μm² under reverse bias V = 150 mV is reported. Maximum extraction coefficient of -2.3 was estimated for analysed structures.

The paper reports on the photoelectrical performance of the long wavelength infrared (LWIR) HgCdTe high operating temperature (HOT) detector. The detector structure was simulated with commercially available software APSYS by Crosslight Inc. taking into account SRH, Auger and tunnelling currents. A detailed analysis of the detector performance such as dark current, detectivity, time response as a function of device architecture and applied bias is performed, pointing out optimal working conditions.