Lead-free ceramics of Na0.5K0.5Nb1-xSbxO3 (NKNS) and Na0.5K0.5Nb1-xSbxO3 + 0.5 mol%MnO2 (NKNS + 0.5 mol%MnO2) (0 < x < 0.06) ceramics were prepared by a conventional solid-state hot pressing method. The ceramics possess a single-phase perovskite structure with orthorhombic symmetry. Microstructural examination revealed that Mn doping of NKNS leads to improvement of densification. The cubic-tetragonal and tetragonal-orthorhombic phase transitions of NKNS shifted to higher and lower temperature, respectively after introduction of Mn ion. Besides, ferroelectric and piezoelectric properties were improved. The results were discussed in term of difference in both ionic size and electronegativity of Nb5+ and Sb5+ and improvement of densification after Mn ion doping.

Crystals of PbTiO3 and 0.9PbTiO3-0.1(Na0.5Bi0.5)TiO3 were obtained by the flux growth method whereas crystals of (Na0.5Bi0.5)TiO3 were growth by the Czochralski method. Raman spectroscopy and polarized light microscopy were performed at room temperature. The Raman spectra of 0.9PbTiO3-0.1(Na0.5Bi0.5)TiO3 shown significant changes comparing to the base materials PbTiO3 and (Na0.5Bi0.5)TiO3. A domain structure was investigated by use polarized light microscopy. Dielectric permittivity measurements were carried out in the temperature range from 20°C to 550°C and a frequency from 1 kHz to 1 MHz. These showed higher dielectric permittivity for the crystals 0.9PbTiO3-0.1(Na0.5Bi0.5)TiO3 than the source materials PbTiO3 and (Na0.5Bi0.5)TiO3.

The high value of dielectric constant makes it possible to applied 0.9PbTiO3-0.1(Na0.5Bi0.5)TiO3 as efficient dielectric medium in a capacitors. The small size of the domain structure with the easy possibility of switching by application of an external electric field, give opportunities to apply these materials to FRAM memory applications. Moreover, the high sensitivity of these materials to the surrounding gases e.g. ammonia, chlorine, hydrogen, etc., allows the construction of sensor devices.