This paper describes practical issues related to control of the active power buffer (APB) developed for a 2 kVA single-phase inverter. The buffer is designed using the latest GaN HEMTs controlled with triangular current mode to reduce switching losses, however, the switching frequency should be limited to 1 MHz. In the case of the presented analogue-digital controller, frequency is influenced by a reference current of the APB and circuit. Therefore, the operation at start-up and shut-down is especially challenging. A modified control algorithm that also includes pre-charging and discharging process of the energy buffer is presented and experimentally verified by series of tests of the 2 kVA GaN based inverter with the APB.

This work reports the results of a study of Mo thin films synthesis by DC Pulsed Magnetron Sputtering method (PMS), operating at pulse main frequency of 100 kHz and modulated by the additional modulation frequency, driving in the range of 5-1000 Hz (modulated Pulse Magnetron Sputtering – mPMS). We have studied the influence of mPMS on plasma chemical reactions and mechanisms of layer growth using optical emission spectroscopy technique. Our experiment showed strong influence of mPMS method, on the morphology (scanning electron microscopy), phase composition (X-ray diffractometry) and electric properties (4-point probes method) of nanocrystalline and amorphous Mo films. From the utilitarian point of view, low value of resistivity – 43,2 μΩcm of synthesized Mo films predestines them as back contacts for thin solar cells CIGS. Our results revealed that additional modulation frequency should be considered as an important factor for optimization of films synthesis by means of PMS-based methods.