Thiswork presents results of comparative studies of the optical absorption coefficient spectra of ion implanted layers in silicon. Three nondestructive and noncontact techniques were used for this purpose: spectroscopic ellipsometry (SE), modulated free carriers absorption (MFCA) and the photo thermal radiometry (PTR). Results obtained with the ellipsometric method are the proof of correctness of the results obtained with the MFCAandPTRtechniques. These techniques are usually used for investigations of recombination parameters of semiconductors. They are not used for investigations of the optical parameters of semiconductors. Optical absorption coefficient spectra of Fe+ and Ge+ high energy and dose implanted layers in silicon, obtained with the three techniques, are presented and compared.

The photoacoustic cell is the heart of the nondestructive photoacoustic method. This article presents a new simple lumped-components CRLC model of the Helmholtz type photoacoustic cell. This model has been compared with the well known literature models describing the Helmholtz type cells for photoacoustic spectroscopy. Experimental amplitude and phase frequency data obtained for the two photoacoustic cells have been presented and interpreted in a series of models. Results of the fitting of theoretical curves, obtained in these models, to the experimental data have been shown and discussed.

This paper presents maps of spatial distributions of the short circuit current Isc(x,y) and the open circuit voltage Uoc(x,y) of the investigated low cost solar cells. Visible differences in values of these parameters were explained by differences in the serial and shunt resistances determined for different points of solar cells from measurements of I–V characteristics. The spectral dependence of the photo voltage of solar cell is also shown, discussed and interpreted in the model of amorphous and crystal silicon.