To overcome the detrimental influence of α impulse noise in power line communication and the trap of scarce prior information in traditional noise suppression schemes , a power iteration based fast independent component analysis (PowerICA) based noise suppression scheme is designed in this paper. Firstly, the pseudo-observation signal is constructed by weighted processing so that single-channel blind separation model is transformed into the multi-channel observed model. Then the proposed blind separation algorithm is used to separate noise and source signals. Finally, the effectiveness of the proposed algorithm is verified by experiment simulation. Experiment results show that the proposed algorithm has better separation effect, more stable separation and less implementation time than that of FastICA algorithm, which also improves the real-time performance of communication signal processing.

Results of the ab initio molecular dynamics calculations of silicon crystals are presented by means of analysis of the velocity autocorrelation function and determination of mean phonon relaxation time. The mean phonon relaxation time is crucial for prediction of the phonon-associated coefficient of thermal conductivity of materials. A clear correlation between the velocity autocorrelation function relaxation time and the coefficient of thermal diffusivity has been found. The analysis of the results obtained has indicated a decrease of the velocity autocorrelation function relaxation time t with increase of temperature. The method proposed may be used to estimate the coefficient of ther-mal diffusivity and thermal conductivity of the materials based on silicon and of other wide-bandgap semiconductors. The correlation between kinetic energy fluctuations and relaxation time of the velocity autocorrelation function has been calculated with the relatively high coefficient of determination R2 = 0.9396. The correlation obtained and the corresponding approach substantiate the use of kinetic energy fluctuations for the calculation of values related to heat conductivity in silicon-based semiconductors (coefficients of thermal conductivity and diffusivity).