Absorption of the below-bandgap solar radiation and direct pre-thermalizational impact of a hot carrier (HC) on the operation of a single-junction solar cell are ignored by the Shockley-Queisser theory. The detrimental effect of the HC is generally accepted only via the thermalization-caused heating of the lattice. Here, the authors demonstrate experimental evidence of the HC photocurrent induced by the below-bandgap 0.92 eV photon energy radiation in an industrial silicon solar cell. The carriers are heated both through direct free-carrier absorption and by residual photon energy remaining after the electron-hole pair generation. The polarity of the HC photocurrent opposes that of the conventional generation photocurrent, indicating that the total current across the p-n junction is contingent upon the interplay between these two currents. A model of current-voltage characteristics analysis allowing us to obtain a reasonable value of the HC temperature was also proposed. This work is remarkable in two ways: first, it contributes to an understanding of HC phenomena in photovoltaic devices, and second, it prompts discussion of the HC photocurrent as a new intrinsic loss mechanism in solar cells.