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Application of cross-correlation-based transimpedance amplifier in InAs and InAsSb IR detectors noise measurements

Krzysztof Achtenberg  Janusz Mikołajczyk Zbigniew Bielecki
Opto-Electronics Review | 2022 | 30 | 2 | e141126 | DOI: 10.24425/opelre.2022.141126
Keywords cross-correlation IR detectors noise transimpedance amplifier InAs InAsSb
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Abstract

The paper presents noise measurements in low-resistance photodetectors using a cross-correlation-based transimpedance amplifier. Such measurements usually apply a transimpedance amplifier design to provide a current fluctuation amplification. In the case of low-resistance sources, the measurement system causes additional relevant system noise which can be higher than noise generated in a tested detector. It mainly comes from the equivalent input voltage noise of the transimpedance amplifier. In this work, the unique circuit and a three-step procedure were used to reduce the floor noise, covering the measured infrared detector noise, mainly when operating with no-bias or low-bias voltage. The modified circuit and procedure to measure the noise of unbiased and biased detectors characterized by resistances much lower than 100 Ω were presented. Under low biases, the reference low-resistance resistors tested the measurement system operation and techniques. After the system verification, noise characteristics in low-resistance InAs and InAsSb infrared detectors were also measured.
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Authors and Affiliations

Krzysztof Achtenberg 
1
ORCID: ORCID
Janusz Mikołajczyk
1
ORCID: ORCID
Zbigniew Bielecki
1
ORCID: ORCID
  1. Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland

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