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The aim of this paper is to present a new approach to the problem of silicon integrated spiral inductors modeling. First, an overview of models and modeling techniques is presented. Based on 3D simulations and published measurement results, a list of physical phenomena to be taken into account in the model is created and based on it, the spiral inductor modeling by frequency sampling method is presented. To verify the proposed method a test circuit, containing 6 spiral inductors was designed and integrated in a silicon technology. The parameters of the spiral inductors from the test circuit were next measured and compared with simulations results. The comparison for one of those six spiral inductors is presented in the article.
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