Details

Title

Ultra-low Power FinFET SRAM Cell with Improved Stability Suitable for Low Power Applications

Journal title

International Journal of Electronics and Telecommunications

Yearbook

2019

Volume

vol. 65

Numer

No 4

Authors

Keywords

FinFET ; RSNM ; WSNM ; Hold Margin ; Subthreshold ; Leakage Power

Divisions of PAS

Nauki Techniczne

Coverage

603-609

Publisher

Polish Academy of Sciences Committee of Electronics and Telecommunications

Date

2019.11.03

Type

Article

Identifier

ISSN 2081-8491 (until 2012) ; eISSN 2300-1933 (since 2013)

DOI

10.24425/ijet.2019.129819

×