Details

Title

Dopant-Based Charge Sensing Utilizing P-I-N Nanojunction

Journal title

Metrology and Measurement Systems

Yearbook

2017

Volume

vol. 24

Issue

No 2

Authors

Keywords

nanosensor ; silicon ; p-i-n junction ; dopant ; Kelvin probe force microscope

Divisions of PAS

Nauki Techniczne

Coverage

391–399

Publisher

Polish Academy of Sciences Committee on Metrology and Scientific Instrumentation

Date

2017.06.30

Type

Artykuły / Articles

Identifier

DOI: 10.1515/mms-2017-0029 ; ISSN 2080-9050, e-ISSN 2300-1941

Source

Metrology and Measurement Systems; 2017; vol. 24; No 2; 391–399

References

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