@ARTICLE{Latkowska_Magdalena_AP-MOVPE_2014,
 author={Latkowska, Magdalena and Dawidowski, Wojciech and Ściana, Beata and Zborowska-Lindert, Iwona and Mikolášek, Miroslav and Radziewicz, Damian and Pucicki, Damian and Bielak, Katarzyna and Badura, Mikołaj and Kováč, Jaroslav and Tłaczała, Marek},
 volume={vol. 60},
 number={No 2},
 journal={International Journal of Electronics and Telecommunications},
 howpublished={online},
 year={2014},
 publisher={Polish Academy of Sciences Committee of Electronics and Telecommunications},
 abstract={Abstract Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed.},
 title={AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell},
 URL={http://www.czasopisma.pan.pl/Content/87578/PDF/18.pdf},
 doi={10.2478/eletel-2014-0018},
}